2000-07-18 2000-07-18 2000-07-18 2000-07-18 1 1 1 1/4 /4 /4 /4 CMS10 CMS10 toshiba schottky barrier rectifier schottky barrier type toshiba is continually working to improve the quality and the reliability of its products.nevertheless,semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stres s. it is the responsibility of the buyer,when utilizing toshiba products, to observe standards of safety,and to avoid situations in which a malfunction or failure of a toshiba product could cause loss of human life,bodily injury or damage to property.in developing your designs,plese ensure that toshiba products are used within specified operating ranqes as set forth in the most recent products specifications.also, please keep in mind the precautions and conditions set forth in the toshiba semiconductor reliability handbook. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. unit:mm jedec - eiaj - toshib a - 0.65 0.65 3.8 4.7 1.7 2.4 y y y y 0.98 0 ? ? ? ? 0.1 2 1 1:anode 2:cathode 0.16 weight:0.023g electrical characteristica(ta=25 ) characteristic symbol test condition min. typ. max. unit v fm(1) i fm =0.1a -0.34- v v fm(2) i fm =0.5a -0.41- v v fm(3) i fm =1.0a - 0.47 0.55 v i rrm v rrm =5v -1.0 - a i rrm v rrm =40v - 8.0 500 a junction capacitance cj vr=10v,f=1.0mhz - 50 - pf on ceramic substrate thermal resistance ( solderrin g land 2mm2mm ) /w on g lass-e p ox y substrate ( solderrrin g land 6mm6mm ) /w rth(j-l) - -16 /w - - - 60 135 peak forward voltage repetitive peak reverse current rth(j-a) - - swithing mode power supply applications portable equipment battery applications forward voltage v fm =0.55v(max.) average forward current i f ( av ) =1.0a repetitive peak reverse voltage v rrm =40v small & thin package maximum ratings characteristic symbol rating unit repetitive peak reverse voltage v rrm 40 v average forward current *1 i f(av) 1.0 ( ta=21 ) a peak one cycle surge forward current ( non-re p etitive ) i fsm 25(50hz) a junction temperature t j -40 150 storage temperature tstg -40 150 *1 glass-epoxy substrate(substrate size:50mm*50mm solderin g land:6mm*6mm )
2000-07-18 2000-07-18 2000-07-18 2000-07-18 2 2 2 2/4 /4 /4 /4 CMS10 handling precaution schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products.this current leakage and not proper operating temperature or voltage may cause thermal run. please take forward and reverse loss into consideration when you design . 1.4 2.1 3.0 standard soldering pad yyyyyyyyyyyyyyyy yyyyyyyyyyyyyyyy yyyyyyyyyyyyyyyy yyyyyyyyyyyyyyyy unit:mm 1.4
2000-07-18 2000-07-18 2000-07-18 2000-07-18 3 3 3 3/4 /4 /4 /4 CMS10 i f -v f 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 instantaneous forward voltage v f (v) instantaneous forward current i f (a) 125 75 ? ? ? ? 25 ? ? ? ? tj=150 ? ? ? ? p f(av) -i f(av) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 average forward current i f(av) (a) average forward power dissipation p f(av) (w) =180 dc =120 =60 rth(j-a) - t 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 time t (s) time t (s) time t (s) time t (s) transient thermal impedance rth(j-a) ( /w) on glass-epoxy substrate soldering land y y y y 6mm6mm on glass-epoxy substrate soldering land y y y y 2.1mm1.4mm on ceramic substrate soldering land y y y y 2mm2mm ta max - i f (av) on glass-epoxy substrate(size:50mm*50mm,land size:6mm*6mm) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 average forward current i f(av) (a) maximum allowable ambient temperature ta max ( ? ? ? ? ) =180 dc =60 =120 ta max - i f (av) on ceramic substrate(size:50mm*50mm) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 average forward current i f(av) (a) maximum allowable ambient temperature ta max ( ? ? ? ? ) =180 dc =60 =120
2000-07-18 2000-07-18 2000-07-18 2000-07-18 4 4 4 4/4 /4 /4 /4 CMS10 i r -t j (typical) 0.0001 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 160 junction temperature t j ( ) repetitive peak reverse current i r (ma) vr=5v vr=10v vr=30v pulse measurement vr=20v vr=15v vr=40v p r(av) - v r (typical) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 010203040 reverse voltage v r v) average reverse power dissipation p r(av) w 60 120 180 240 300 dc surge forward current (non-repetitive) 0 4 8 12 16 20 24 28 1 10 100 number of cycles peak surge forward current i fsm (a) ta=25 f=50hz c j -v r typical typical typical typical 10 100 1000 1 10 100 reverse voltage v r (v) junction capacitance c j (pf) f=1mhz ta=25
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